ADR425BRZ

Overview

The ADR425BRZ is a second-generation XFET voltage reference providing a fixed 5.00 V output in an 8-lead SOIC package. It features B-grade initial accuracy of ±0.04% and a temperature coefficient of 3 ppm/°C over the −40°C to +125°C range. The device operates with a supply voltage from 7 V to 18 V, drawing a maximum quiescent current of 500 µA. It delivers up to 10 mA of output current while maintaining low noise performance of 3.4 µV p-p (0.1 Hz to 10 Hz).

Feature Summary

• Utilizes patented eXtra implanted junction FET (XFET) technology for superior accuracy and thermal hysteresis compared to band gap references.
• Includes a dedicated TRIM terminal allowing output voltage adjustment within a ±0.5% range without compromising temperature stability.
• Offers long-term stability of 50 ppm per 1000 hours and exceptionally low voltage noise density.

Applications

• Precision data acquisition systems
• High resolution converters
• Optical network control circuits

Procurement Notes

Verify the specific suffix 'BRZ' corresponds to the B-grade electrical specifications and tube packaging configuration. Confirm that the required input voltage headroom meets the minimum 2 V differential requirement relative to the 5 V output. Ensure the design accommodates the specified operating temperature range and power dissipation limits for the SOIC-8 footprint.

Selection Notes

Select this component when a fixed 5 V reference with high precision is required. The B-grade variant provides tighter initial accuracy than the A-grade option. Consider the 7 V minimum input voltage constraint; if lower supply voltages are available, the ADR420 or ADR421 models may be more appropriate. Verify that the 10 mA load capability aligns with system requirements.

Part Context

The ADR425BRZ belongs to the ADR42x series of ultraprecision voltage references manufactured by Analog Devices. This family utilizes XFET architecture to achieve low noise and high stability in compact SOIC and MSOP packages. The BRZ designation indicates the specific grade, output voltage, and RoHS-compliant tube packaging format.

Replacement Considerations

ADR425ARZ

FAQ

How does the XFET technology differ from standard band gap references?

XFET technology uses two junction field-effect transistors with different pinch-off voltages. This results in a much lower intrinsic temperature coefficient and significantly reduced noise compared to the compensation circuitry used in band gap references.

Can the output voltage be adjusted using the TRIM pin?

Yes, the TRIM terminal allows for output voltage adjustment over a ±0.5% range. To maintain optimal temperature performance, low temperature coefficient resistors should be used in the trimming circuit.