ADR435BR

Overview

The ADR435BR is a precision XFET voltage reference from Analog Devices, delivering a nominal 5.0 V output with B-grade accuracy of ±2 mV (±0.04%). It features an ultralow temperature coefficient of 3 ppm/°C and operates within a supply voltage range of 7.0 V to 18 V. The device draws a maximum quiescent current of 800 µA and provides high drive capability, sourcing up to 30 mA and sinking up to 20 mA. It includes a dedicated trim terminal for fine-tuning the output voltage over a ±0.5% range without compromising performance.

Feature Summary

• Utilizes patented XFET technology to minimize voltage change vs. temperature nonlinearity.
• Provides high output source and sink current capabilities for driving demanding loads.
• Includes a trim terminal allowing precise output voltage adjustment over a 0.5% range.
• Operates with low supply voltage headroom requirements compared to buried Zener references.

Applications

• Precision data acquisition systems
• High resolution data converters
• Medical instruments
• Industrial process control systems

Procurement Notes

Verify the specific package variant required, as the ADR435B series is available in both MSOP-8 and SOIC-8 configurations. Confirm that the ordering suffix matches the desired tape and reel or tube packaging format. Ensure the design accounts for the minimum input-to-output differential voltage specified in the datasheet to maintain regulation under all load conditions.

Selection Notes

Select this component when a stable 5 V reference is needed with minimal noise and drift. The B-grade specification ensures tight initial accuracy and low temperature coefficients suitable for high-performance applications. Consider the thermal resistance values provided for the specific package type when calculating junction temperatures under heavy load conditions.

Part Context

This part belongs to the ADR43x family of ultralow noise XFET voltage references. The family includes variants with different fixed output voltages such as 2.048 V, 2.500 V, 3.000 V, and 4.096 V. All members share similar low-noise characteristics and current drive capabilities, differing primarily in their nominal output voltage and minimum operating input voltage ranges.

Replacement Considerations

ADR435ARZ

FAQ

How does the XFET technology improve performance compared to band gap references?

XFET technology uses two JFETs with different pinch-off voltages. The correction term generated is significantly lower than that of band gap references, resulting in much lower noise because most band gap noise originates from the temperature compensation circuitry.

What is the purpose of the COMP pin on the ADR435BR?

The COMP pin provides access to an internal node of the op amp. Connecting an external RC network here allows for overcompensation to eliminate noise peaking caused by large capacitive loads.