ADRF5080BCCZN

RF Switches Overview

The ADRF5080BCCZN is a reflective single-pole eight-throw (SP8T) RF switch manufactured using silicon technology. It operates within a frequency range of 100 MHz to 20 GHz. The device features an insertion loss below 2.0 dB and provides isolation greater than 40 dB. It is housed in a 36-pin LGA package and supports a maximum power handling of 1 Watt.

RF Switches Feature Summary

• Reflective SP8T topology for multi-channel signal routing
• Silicon-based construction for high-frequency operation up to 20 GHz
• Low insertion loss profile under 2.0 dB
• High port-to-port isolation exceeding 40 dB

RF Switches Applications

• Phased array antenna systems
• Test and measurement equipment
• Wireless infrastructure base stations

RF Switches Procurement Notes

Verify the specific suffix BCCZN against official Analog Devices documentation to confirm pinout, thermal pad configuration, and moisture sensitivity level. Ensure compatibility with the required PCB footprint and reflow soldering profiles before integration into production designs.

RF Switches Selection Notes

Select this component when a high-isolation, low-loss switching solution is required for frequencies up to 20 GHz. The silicon process offers a compact form factor compared to GaAs alternatives. Evaluate the 1W power handling limit against system requirements to ensure adequate headroom for peak signal levels.

RF Switches Part Context

This part belongs to the ADRF5080 series of silicon RF switches. It serves as a high-performance alternative to traditional GaAs switches, offering comparable electrical performance in a smaller silicon footprint. The series is designed for applications demanding precise signal routing in complex RF front ends.

RF Switches Replacement Considerations

Direct substitutes include other Analog Devices SP8T switches such as the ADRF5080 without the BCCZN suffix if package variations exist, or higher-frequency models like the ADRF5048BCCZN for extended bandwidth needs. Verify pin compatibility and thermal characteristics when cross-referencing.