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ADS065J020E3-ASARH
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Product Detailed Parameters
- Description：DIODE 650V 20A TO2632L
- Series：Sanan TO263
- Mfr：Luminus Devices Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：20A
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263-2L
- Operating Temperature - Junction：-
- Grade：Automotive
- Qualification：-
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Overview
The ADS065J020E3-ASARH is a silicon carbide (SiC) Schottky diode manufactured by Luminus Devices Inc. It features a 650 V reverse voltage rating and a continuous forward current of 20 A. The component is housed in a TO-263-2L surface-mount package, designed for automotive applications requiring high-voltage rectification. This device utilizes SiC technology to provide superior thermal performance and switching efficiency compared to traditional silicon alternatives.
Feature Summary
- Utilizes silicon carbide semiconductor technology for enhanced thermal stability
- Designed specifically for automotive-grade high-voltage rectification requirements
- Features a low-profile surface-mount package optimized for automated assembly
Applications
- Automotive power supply systems
- High-voltage DC-DC converters
- On-board charging circuits
Procurement Notes
Verify the manufacturer designation carefully, as this specific part number appears associated with Luminus Devices in some catalogs but may also be linked to Sanan Power Semiconductor in others. Confirm the exact datasheet source and electrical specifications before procurement to ensure compatibility with your design requirements.
Selection Notes
Select this component when designing automotive electronics that demand high breakdown voltage and significant current handling capabilities. The TO-263-2L package facilitates efficient heat dissipation, making it suitable for compact power management modules where space constraints are critical.
Part Context
This device belongs to the category of wide-bandgap power semiconductors. Silicon carbide diodes like this model are increasingly replacing silicon counterparts in high-efficiency applications due to their ability to operate at higher temperatures and frequencies with lower energy losses.
