AIDK08S65C5ATMA1

Overview

The AIDK08S65C5ATMA1 is a Silicon Carbide Schottky diode from the 5th Generation CoolSiC™ Automotive portfolio. It features a maximum DC blocking voltage of 650 V and a continuous forward current of 8 A at a case temperature of 126 °C. The device operates within a junction temperature range of -40 °C to 175 °C and utilizes a PG-TO263-2-1 (D2PAK) package with real two pins.

Feature Summary

• Silicon Carbide construction enabling temperature-independent switching behavior
• Absence of reverse recovery and forward recovery effects
• High surge current capability for robust operation
• Qualified for automotive applications per AEC-Q100/101 standards

Applications

• Traction inverter systems
• Booster and DCDC converters
• On-board chargers and Power Factor Correction circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering code matches the required package variant and ensure compliance with automotive qualification standards before integration into production designs.

Selection Notes

Select this component for high-frequency power conversion where low switching losses are critical. The silicon carbide material supports higher operating temperatures compared to silicon, allowing for reduced cooling requirements and increased system power density in compact designs.

Part Context

This part belongs to the CoolSiC™ G5 family designed to complement Infineon's IGBT and CoolMOS™ portfolios. It targets stringent application requirements in the 650V class, offering improved efficiency across all load conditions due to its thermal characteristics and low figure of merit.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.