AIDK10S65C5ATMA1

Overview

The AIDK10S65C5ATMA1 is a 650V/10A Silicon Carbide Schottky Diode from Infineon's 5th Generation CoolSiC™ Automotive portfolio. It utilizes thin wafer technology for improved efficiency and low figure of merit (Qc x Vf). The device operates within a junction temperature range of -40°C to 175°C and features no reverse or forward recovery. Key electrical parameters include a maximum DC blocking voltage of 650 V, a continuous forward current of 10 A at TC = 124 °C, and a typical forward voltage of 1.5 V at IF = 10 A and Tj = 25°C.

Feature Summary

• No reverse recovery and no forward recovery characteristics
• Temperature independent switching behavior
• High surge current capability with dv/dt ruggedness
• Pb-free lead plating compliant with RoHS standards

Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Procurement Notes

Verify the specific ordering code against official documentation to ensure correct package and tape/reel configuration. Confirm that the component meets AEC-Q100/101 automotive validation requirements if intended for qualified automotive applications. Check for any end-of-life notifications or discontinuation updates prior to finalizing procurement plans.

Selection Notes

Select this component for high-frequency and high-power density solutions requiring reduced cooling. It complements Infineon’s IGBT and CoolMOS™ portfolios in the 650V class. Ensure thermal management aligns with the specified RthJC and operating temperature limits to maintain reliability under varying load conditions.

Part Context

This part belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It is designed to enable system efficiency improvements over silicon diodes by reducing EMI and operating temperatures. The PG-TO263-2-1 package supports surface mount installation with real two pins.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.