AIDK12S65C5ATMA1

Overview

The AIDK12S65C5ATMA1 is a 650V/12A Silicon Carbide Schottky Diode from Infineon's 5th Generation CoolSiC™ Automotive portfolio. It is housed in a PG-TO263-2-1 (D2PAK) package with real two pins. The device features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current of 12 A at a case temperature of 124 °C. It operates within a junction temperature range of -40°C to 175°C, with a thermal resistance (junction-to-case) of 2.4 K/W maximum.

Feature Summary

• No reverse recovery or forward recovery characteristics
• Temperature independent switching behavior
• High surge current capability
• Reduced EMI emissions

Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Procurement Notes

Verify the specific ordering code SP001725244 against official Infineon documentation to ensure correct revision status. Confirm that the PG-TO263-2-1 package outline matches your PCB footprint requirements. Validate that the component meets AEC-Q100/101 automotive qualification standards for your intended application environment.

Selection Notes

Select this component when high system efficiency and reduced cooling requirements are critical. Its low figure of merit (Qc x Vf) supports increased power density solutions. Ensure the design accommodates its 175°C maximum junction temperature rating and utilizes appropriate thermal management strategies given its 2.4 K/W junction-to-case thermal resistance.

Part Context

This diode belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It is designed to complement Infineon’s IGBT and CoolMOS™ portfolios, specifically targeting stringent requirements in the 650V voltage class. The technology leverages thin wafers for improved efficiency across all load conditions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.