AIDW10S65C5XKSA1

Description：DIODE SIC 650V 10A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube

SKU:6554ef32ede5 Category: Single Diodes Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：DIODE SIC 650V 10A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：60 µA @ 650 V
Capacitance @ Vr, F：303pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-41
Operating Temperature - Junction：-40°C ~ 175°C
Grade：Automotive
Qualification：AEC-Q100/101

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AIDW10S65C5XKSA1

Overview

The AIDW10S65C5 is a 650V Silicon Carbide Schottky Diode from Infineon's 5th Generation CoolSiC™ Automotive portfolio, housed in a PG-TO247-3-41 package. It features a maximum repetitive reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 10 A at TC = 134 °C. The typical forward voltage (VF) is 1.5 V at IF = 10 A and Tj = 25 °C. Non-repetitive peak forward current reaches 431 A at TC = 25 °C for 10 µs. Power dissipation is 65 W at TC = 25 °C. Junction temperature ranges from -40 °C to 175 °C.

Feature Summary

Automotive qualified product validated according to AEC-Q100/101 standards
Temperature independent switching behavior with no reverse recovery or forward recovery
High surge current capability and high dv/dt ruggedness
Pb-free lead plating and RoHS compliant construction

Applications

Traction inverter systems
Booster and DCDC converters
On-board chargers and PFC circuits

Procurement Notes

Verify the specific ordering code SP001725156 against official Infineon documentation to ensure correct component revision. Confirm that the PG-TO247-3-41 package outline matches your PCB footprint requirements. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under intended operating conditions.

Selection Notes

Select this component when automotive reliability certification is mandatory for 650V applications. The TO247-3 package facilitates through-hole mounting suitable for high-power density designs. Evaluate system efficiency gains derived from low figure of merit compared to silicon alternatives. Verify compatibility with existing gate drive and snubber circuitry designed for SiC devices.

Part Context

This device belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It utilizes thin wafer technology to achieve improved efficiency across all load conditions. The product complements Infineon’s IGBT and CoolMOS™ portfolios within the 650V voltage class, targeting stringent automotive application requirements.