AIDW12S65C5XKSA1

Overview

The AIDW12S65C5 is a 650V/12A Silicon Carbide Schottky Diode in the TO-247-3 package. It features a maximum repetitive reverse voltage of 650 V and a continuous forward current of 12 A at TC = 133 °C. The junction temperature range spans from -40 °C to 175 °C. At TJ = 25 °C and IF = 12 A, the typical forward voltage is 1.5 V. The total capacitive charge is 18 nC at VR = 400 V. Power dissipation is 76 W at TC = 25 °C.

Feature Summary

• Automotive qualified according to AEC-Q100/101 standards
• No reverse recovery or forward recovery characteristics
• Temperature independent switching behavior
• High surge current capability

Applications

• Traction inverter
• Booster / DCDC Converter
• On board Charger / PFC

Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct suffix alignment. Confirm that the component meets all automotive validation requirements for the intended application environment. Cross-reference datasheet revision history for any updates to electrical parameters or thermal characteristics before finalizing procurement specifications.

Selection Notes

Select this component for high-frequency applications requiring reduced cooling due to system efficiency improvements over silicon diodes. Ensure the design accommodates the specified thermal resistance values and operating temperature limits. Consider the low figure of merit (Qc x Vf) for optimized performance across various load conditions within the 650V class.

Part Context

This device belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It utilizes thin wafer technology for improved efficiency and compact design. The product complements Infineon’s IGBT and CoolMOS™ portfolio to meet stringent requirements in the 650V voltage class.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.