AIDW20S65C5XKSA1

Description：DIODE SIC 650V 20A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube

SKU:dd0203af820c Category: Single Diodes Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：DIODE SIC 650V 20A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：20A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 20 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：120 µA @ 650 V
Capacitance @ Vr, F：584pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-41
Operating Temperature - Junction：-40°C ~ 175°C
Grade：Automotive
Qualification：AEC-Q100/101

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AIDW20S65C5XKSA1

Overview

The AIDW20S65C5XKSA1 is a 650V/20A Silicon Carbide Schottky Diode in the TO-247-3 package. It features a maximum repetitive reverse voltage of 650 V and a continuous forward current of 20 A at a case temperature of 127 °C. The device supports an operating junction temperature range from -40 °C to 175 °C with a power dissipation of 112 W at 25 °C. Key electrical parameters include a typical forward voltage of 1.5 V at 20 A and 25 °C, and a total capacitive charge of 29 nC at 400 V. It offers high surge current capability up to 103 A.

Feature Summary

Automotive qualified product validated according to AEC-Q100/101 standards
Temperature independent switching behavior with no reverse or forward recovery
High surge current capability for robust operation under transient conditions
Reduced EMI and system size savings due to lower cooling requirements

Applications

Traction inverter systems
Booster and DCDC converters
On-board chargers and PFC circuits

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and automotive qualification status. Confirm that the component meets all relevant AEC-Q100/101 validation requirements for your intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring high-frequency operation and improved system efficiency over silicon diodes. Consider its thermal characteristics and low figure of merit (Qc x Vf) for designs needing reduced cooling requirements and increased power density within the 650V voltage class.

Part Context

This device belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family. It utilizes thin wafer technology to achieve improved efficiency across all load conditions. The product is designed to complement Infineon’s IGBT and CoolMOS™ portfolio, ensuring compliance with stringent application requirements in the 650V class.