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ALD910025SALI is listed in the Special Purpose range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET DUAL SAB 2.5V 8SOIC. Review the specifications below when checking this part for your BOM.
The ALD910025SALI is a dual-channel Supercapacitor Auto Balancing (SAB™) MOSFET array manufactured by Advanced Linear Devices Inc. It utilizes EPAD® technology to balance voltage and leakage current in series-connected supercapacitors, preventing over-voltages. The device features precision factory-trimmed gate threshold voltages of 2.50V at an output current of 1µA. It operates within a supply voltage range up to 15.0V and supports an operating temperature range from -40°C to +85°C. The component is housed in an 8-pin SOIC package.
Verify the specific ordering suffix 'L' indicates lead-free compliance per RoHS standards. Confirm the 'I' suffix corresponds to the industrial temperature range of -40°C to +85°C. Ensure the package type matches the required 8-pin SOIC configuration for your design. Cross-reference the datasheet version to confirm compatibility with your application requirements.
Select this component when balancing two series-connected supercapacitors is required. The dual-channel architecture provides independent control for each cell. Consider the exponential current response characteristics for precise voltage limiting. Verify that the maximum drain-source breakdown voltage of 10.6V aligns with your supercapacitor stack ratings.
This part belongs to the ALD9100xx family of SAB™ MOSFET arrays, designed specifically for supercapacitor applications. It complements the quad-channel ALD810025 variant. The family addresses the critical need for passive voltage balancing in high-capacity energy storage systems without external control circuitry.
ALD910025SAL is the commercial temperature grade equivalent.
It acts as a voltage-dependent resistor where the output current increases exponentially as the input voltage rises above the 2.50V threshold, shunting excess charge to prevent over-voltage.
The typical gate threshold voltage is 2.50V when measured at a drain-source current of 1µA with gate-drain source terminals connected together.
When the input voltage is below approximately 2.30V, the device dissipates essentially no power due to its near-zero leakage current characteristics.
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