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Product Detailed Parameters
- Description：MOSFET P-CH 120V 1.4A SOT-23
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
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Overview
The AM2317P is a single P-channel enhancement mode field-effect transistor manufactured by Analog Power Inc. It is housed in a SOT-23 surface-mount package and designed for general-purpose switching applications. The device features a maximum drain-source voltage rating of -200V and a maximum gate-source voltage limit of ±20V. Key electrical characteristics include a typical on-resistance of 2600 milliohms measured at a gate drive of 10V with a drain current of 0.8 amperes, and a continuous drain current capability of 2 amperes. The component supports a maximum power dissipation of 2 watts under specified thermal conditions.
Feature Summary
- Single P-channel configuration optimized for low-side or high-side switching topologies
- Robust voltage handling capabilities suitable for industrial and automotive environments
- Compact SOT-23 footprint enabling efficient space utilization on printed circuit boards
Applications
- DC-DC converter synchronous rectification stages
- Motor driver output stages
- Power management unit load switches
Procurement Notes
Verify the specific datasheet revision to confirm exact parameter tolerances and thermal resistance values before finalizing designs. Ensure that the ordering suffix matches the required tape-and-reel packaging specifications if automated assembly is utilized. Cross-reference the manufacturer's latest documentation to validate compliance with current environmental directives and material declarations.
Selection Notes
Evaluate the thermal performance requirements against the 2-watt power dissipation limit to determine if additional heatsinking is necessary. Compare the 2600-milliohm on-resistance against system efficiency targets to ensure acceptable conduction losses. Confirm that the -200V breakdown voltage provides adequate margin for transient voltage spikes within the target application circuit.
Part Context
This component belongs to the Analog Power Inc. MOSFET portfolio, which offers various voltage ratings and package options for power switching needs. The AM2317P specifically addresses applications requiring moderate voltage blocking capabilities in a compact form factor. It serves as a discrete solution for controlling power flow in electronic systems where integrated power ICs are not feasible.
Replacement Considerations
Consult official substitution guides for verified alternatives. Potential candidates may include other -200V P-channel devices in SOT-23 packages from the same manufacturer or compatible third-party equivalents with matching pinouts and electrical parameters.
