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Product Detailed Parameters
- Description：MOSFET N-CH 200V 0.77A SOT-23
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The AM2350N is a single N-Channel MOSFET from Analog Power Inc., designed for surface-mount applications in the SOT-23 package. It features a drain-source voltage rating of 200V and a continuous drain current capability of 0.6A at 25°C ambient temperature. The device utilizes low RDS(on) trench technology to minimize conduction losses, with a maximum on-resistance of 2500mΩ at VGS=10V and 2800mΩ at VGS=4.5V. Key electrical parameters include a gate-source threshold voltage range starting from 1V and a total gate charge of 7nC. With a power dissipation rating of 1.25W, it serves as a compact switching solution for low-power DC/DC conversion circuits.
Feature Summary
- Low on-resistance trench technology for efficient power handling
- Fast switching speed suitable for high-frequency applications
- Compact SOT-23 surface-mount package design
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific manufacturer datasheet for the AM2350N to confirm absolute maximum ratings and thermal characteristics before integration. Ensure that the operating conditions remain within the specified limits for drain-source voltage and continuous current. Cross-reference the package type and pinout configuration to guarantee compatibility with the intended PCB footprint and assembly process.
Selection Notes
Select the AM2350N when a 200V blocking capability is required in a small SOT-23 form factor. This component is appropriate for low-current switching tasks where space constraints are critical. Evaluate the trade-off between the relatively high on-resistance and the compact package size against alternative devices offering lower resistance in larger packages.
Part Context
Analog Power Inc. manufactures the AM2350N as part of its portfolio of power management discrete semiconductors. The company focuses on producing components for various electronic applications, maintaining offices in California, Hong Kong, and Taiwan. The AM2350N represents their offering in the high-voltage, low-current N-Channel MOSFET segment.
Replacement Considerations
Publicly confirmed substitute part numbers for the AM2350N are not available in the provided documentation. Engineers should consult official distributor databases or manufacturer cross-reference tools to identify compatible alternatives based on specific electrical and mechanical requirements.
