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Product Detailed Parameters
- Description：MOSFET N-CH 100V 21A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2741 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM30N10-70D is a single N-Channel MOSFET manufactured by Analog Power Inc. It features a 100-V drain-source voltage rating and supports a continuous drain current of 21 A at case temperature. The device utilizes low RDS(on) trench technology, achieving an on-resistance of 78 mΩ at VGS = 10V. It is housed in a surface-mount TO-252 package with a thermal dissipation capacity of 50 W at case temperature.
Feature Summary
- Low RDS(on) trench technology for efficient conduction
- Fast switching speed capabilities
- Low thermal impedance design
Applications
- PoE Power Sourcing Equipment
Procurement Notes
Verify the exact part number AM30N10-70D against official Analog Power Inc. documentation to ensure compatibility. Confirm that the TO-252 surface mount package meets your PCB layout requirements. Check datasheet specifications for thermal management needs, as the device relies on case temperature ratings for current handling. Ensure sourcing channels provide genuine components from authorized distributors to avoid counterfeit risks.
Selection Notes
Select this component when a 100-V N-Channel MOSFET with moderate current handling (21 A) is required. The TO-252 package suits applications needing surface-mount integration with adequate heat sinking. Consider the 78 mΩ on-resistance for efficiency calculations at 10V gate drive. Evaluate thermal impedance constraints if operating near the 50 W case temperature limit.
Part Context
This part belongs to the Analog Power Inc. MOSFET family, specifically designed for power switching applications. It complements other devices in their portfolio by offering a balance of voltage rating and current capacity in a standard surface-mount footprint. The product line emphasizes trench technology for improved performance metrics compared to older planar designs.
Replacement Considerations
Check for direct substitutes like AM30N10-70DE if enhanced variants are needed. Verify pinout compatibility and electrical parameters before swapping with generic 100-V N-Channel MOSFETs. Ensure any replacement maintains the TO-252 package dimensions and thermal characteristics.
