ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 200V 34A TO-220
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：948 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The AM40N20-180P is a single N-channel enhancement mode MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of -200 V and a continuous drain current (ID) of 20 A. The device exhibits a typical on-resistance (RDS(on)) of 170 mΩ at a gate-source voltage (VGS) of 10 V, with a maximum guaranteed value of 180 mΩ under the same conditions. Key electrical characteristics include a total gate charge (QG) of 37 nC and a power dissipation (PD) rating of 300 W. The component is housed in a TO-220 package.
Feature Summary
- Single N-channel enhancement mode configuration
- High power dissipation capability for thermal management
- Low on-resistance optimized for conduction efficiency
Applications
- Power switching circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify the specific manufacturer designation and datasheet revision when sourcing this component. Confirm that the ordering information matches the exact pinout and package dimensions required for your PCB layout. Ensure compliance with relevant environmental standards such as RoHS if applicable to your manufacturing process. Cross-reference the part number with authorized distributors to ensure authenticity and traceability.
Selection Notes
Select this component based on its 200 V breakdown voltage and 20 A current handling capacity. Evaluate the thermal requirements against the 300 W power dissipation rating and the specific RDS(on) performance at your operating gate drive voltage. Consider the TO-220 package suitability for your heat sinking strategy and mechanical mounting constraints within the target application environment.
Part Context
This MOSFET belongs to the Analog Power Inc. discrete semiconductor portfolio, specifically designed for general-purpose power switching applications. It utilizes standard silicon planar technology suitable for medium-to-high voltage environments. The component serves as a fundamental building block for power electronics requiring robust switching performance and reliable operation under varying load conditions.
Replacement Considerations
Consult official Analog Power Inc. documentation or authorized distributor databases for verified direct replacements. Do not assume functional equivalence with other manufacturers' parts without verifying all electrical parameters, pin configurations, and thermal characteristics.
