AM4394N

AM4394N

$0.59
  • Description:MOSFET N-CH 150V 6.5A SOIC-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:7fd9b2324ca0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 150V 6.5A SOIC-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5.5V, 10V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:58 nC @ 5.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4388 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AM4394N

Overview

The Analog Power AM4394N is an N-Channel MOSFET featuring a 150V drain-source voltage rating and a ±20V gate-source voltage limit. It delivers a continuous drain current of 6.5A at 25°C, reducing to 5.5A at 70°C, with a pulsed drain current capability of 50A. The device exhibits a maximum on-resistance of 60mΩ at VGS=5.5V and 50mΩ at VGS=10V. Thermal performance includes a junction-to-ambient resistance of 80°C/W in steady state. Operating temperatures range from -55°C to 150°C.

Feature Summary

  • Utilizes low RDS(on) trench technology for efficient conduction.
  • Features low thermal impedance for effective heat dissipation.
  • Designed for fast switching speed applications.

Applications

  • White LED boost converters
  • Automotive Systems
  • Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision (DS_AM4394N_1A) matches your design requirements. Confirm that the SO-8 package dimensions align with your PCB footprint constraints. Ensure thermal management strategies account for the 80°C/W junction-to-ambient resistance under steady-state conditions. Validate electrical parameters against your specific operating temperature and load profiles before finalizing procurement.

Selection Notes

Select this component for circuits requiring 150V blocking capability with moderate current handling up to 6.5A. Consider the 60mΩ maximum on-resistance at 5.5V gate drive when designing low-voltage logic interfaces. Evaluate thermal dissipation needs based on the specified junction-to-ambient resistance. Ensure the application stays within the safe operating area limits defined in the datasheet graphs.

Part Context

This part belongs to the Analog Power N-Channel MOSFET family, specifically designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching characteristics. The SO-8 package provides a compact solution for surface-mount assembly in various electronic systems.

Replacement Considerations

No public substitute part numbers are documented in the provided source material.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 50A, limited by the maximum junction temperature.

What is the gate-body leakage current specification?

The gate-body leakage current is ±100nA maximum when VDS is 0V and VGS is ±20V.

AM4394NAM4394N
$0.59
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