ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 150V 3.6A SO-8
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The AM4401P is a single P-channel enhancement mode field-effect transistor manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of -150 V and a maximum gate-source voltage (VGS) of 20 V. The device exhibits a typical on-resistance (RDS(on)) of 160 mΩ at a gate drive of 10 V, with a maximum rating of 170 mΩ. At a gate voltage of 4.5 V, the on-resistance is typically 1800 mΩ, rising to a maximum of 1900 mΩ. The component supports a continuous drain current (ID) of 3.6 A and has a total gate charge (QG) of 63 nC. Thermal performance includes a power dissipation (PD) capacity of 3.1 W. The unit is housed in an SO-8 package.
Feature Summary
- Supports high-voltage operation with a -150 V drain-source breakdown capability for robust switching applications.
- Offers low on-resistance characteristics to minimize conduction losses during active states.
- Features optimized gate charge parameters to facilitate efficient driver interface and switching speed management.
Applications
- High-side load switching circuits requiring high voltage tolerance
- Power management modules utilizing P-channel topology
- Motor control interfaces for driving inductive loads
Procurement Notes
Verify the specific datasheet revision and manufacturing lot details upon acquisition. Confirm that the SO-8 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 3.1 W power dissipation limit under expected operating conditions. Cross-reference the RDS(on) values against the required gate drive voltage levels to guarantee performance specifications are met.
Selection Notes
Select this component when a P-channel MOSFET with -150 V blocking capability is required. The SO-8 package provides a balance between current handling and board space efficiency. Consider the gate drive voltage requirements, as the on-resistance varies significantly between 10 V and 4.5 V logic levels. Evaluate the thermal environment to ensure the 3.1 W dissipation rating remains within safe operating limits.
Part Context
The AM4401P belongs to the Analog Power Inc. portfolio of single P-channel MOSFETs designed for general-purpose power switching. It shares the SO-8 package form factor with other devices in the series, such as the AM4403P and AM4405P, which offer different resistance and current ratings. This family targets applications needing reliable high-voltage switching in compact surface-mount configurations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs before considering alternative components from other manufacturers.
