AM7314N

$0.16

Description：MOSFET N-CH 100V 7A DFN3x3
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:a0b98a2a8411 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 7A DFN3x3
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：58mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：54 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2741 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3x3)
Package / Case：8-PowerVDFN

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AM7314N

Overview

The AM7314N is an N-Channel MOSFET featuring a 100-V drain-source voltage rating and a 20-V gate-source voltage limit. It utilizes low RDS(on) trench technology to achieve a maximum on-resistance of 58 mΩ at VGS = 4.5V and 48 mΩ at VGS = 10V. The device supports a continuous drain current of 7.0 A at 25°C, reducing to 5.3 A at 70°C, with a pulsed drain current capability of 28 A. Thermal performance includes a junction-to-ambient resistance of 81 °C/W in a DFN3x3-8L package, operating within a temperature range of -55°C to 150°C.

Feature Summary

Employs low RDS(on) trench technology for efficient conduction.
Provides low thermal impedance for effective heat dissipation.
Enables fast switching speeds suitable for high-frequency applications.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision (e.g., DS_AM7314N_1A) before finalizing designs, as parameters may be subject to change without notice. Confirm that the DFN3x3-8L package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance under actual operating conditions. Validate all electrical characteristics against your specific circuit load and switching frequency requirements.

Selection Notes

Select this component when a 100-V N-Channel MOSFET is required for compact designs due to its small DFN3x3-8L package. It is appropriate for applications demanding low on-resistance at both 4.5V and 10V gate drive levels. Consider its thermal characteristics and current derating curves if operating in elevated ambient temperatures or confined spaces.

Part Context

Analog Power Inc. manufactures the AM7314N as part of their discrete semiconductor lineup. This N-Channel MOSFET is designed for power switching applications requiring robust voltage handling and efficient thermal performance. The device integrates modern trench gate technology to minimize conduction losses while maintaining fast switching capabilities.