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Product Detailed Parameters
- Description：MOSFET N-CH 100V 5.2A DFN1.6X1.6
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta), 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：509 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta), 9.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DFN (1.6x1.6)
- Package / Case：6-PowerUFDFN
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Overview
The AMB410N is an N-Channel MOSFET from Analog Power Inc., housed in a surface-mount 6-DFN (1.6x1.6) package. It features a drain-source voltage rating of 100 V and a gate-source voltage limit of ±20 V. The device supports a continuous drain current of 5.2 A at case temperature of 25°C, reducing to 4.2 A at 70°C, with a thermal derated value of 2.2 A at ambient temperature of 25°C. Power dissipation capabilities are rated at 9.9 W under case conditions and 1.8 W under ambient conditions. The operating junction temperature range extends from -55°C to 150°C, with a maximum input capacitance of 509 pF measured at 15 V.
Feature Summary
- Utilizes a compact 6-DFN surface-mount package for efficient PCB space utilization
- Engineered for high-voltage switching applications with a 100 V drain-source rating
- Designed for robust thermal performance across a wide operating temperature range
Applications
- DC-DC converters
- Load point regulators
- Motor control circuits
Procurement Notes
Verify the specific manufacturer datasheet for precise electrical characteristics and absolute maximum ratings before integration. Confirm that the 6-DFN footprint matches the design layout requirements. Ensure thermal management strategies align with the specified power dissipation limits under actual operating conditions. Cross-reference part numbers to avoid confusion with similar series components.
Selection Notes
Select this component when a 100 V N-Channel MOSFET is required in a small surface-mount form factor. Consider the thermal constraints carefully, as the ambient power dissipation is limited compared to case-rated values. Evaluate the gate charge and capacitance specifications against the driving circuit capabilities to ensure adequate switching speed and efficiency in the target application.
Part Context
Analog Power Inc. manufactures a broad portfolio of power management semiconductors, including N-Channel and P-Channel MOSFETs. Their product line emphasizes low on-resistance and diverse packaging options such as DFN, SO-8, and TO-220. The company provides solutions for various industries, focusing on efficient power conversion and switching performance across multiple voltage and current ratings.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching key parameters such as voltage rating, current capacity, and package dimensions if considering alternative sources.
