AMR448N-CT

AMR448N-CT

$0.77
  • Description:MOSFET N-CH 100V 80A DFN5x6
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:e06890bb2f36 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 80A DFN5x6
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 10A, 6.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:32 nC @ 6.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2681 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DFN5x6
  • Package / Case:DFN5x6

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AMR448N-CT

Overview

The AMR448N is an N-Channel MOSFET from Analog Power Inc. featuring a 100-V drain-source voltage and a DFN5X6-8L package. It offers low on-resistance of 5.6 mΩ at VGS=10V and 7 mΩ at VGS=6.5V, with a continuous drain current of 24A at TA=25°C. The device supports fast switching speeds and includes a body diode with a forward voltage of 0.73V at IS=3.3A. Thermal resistance is rated at 1 °C/W junction-to-case and 65 °C/W junction-to-ambient.

Feature Summary

  • Utilizes low rDS(on) trench technology for efficient conduction
  • Features low thermal impedance for effective heat dissipation
  • Provides fast switching speed suitable for high-frequency applications

Applications

  • LED Inverter Circuits
  • DC/DC Conversion Circuits
  • Motor drives

Procurement Notes

Verify the exact part number against official documentation, as suffixes like CT may indicate specific tape-and-reel packaging or variant configurations not detailed in standard datasheets. Confirm that the component meets all required electrical specifications for your design before procurement. Ensure compatibility with the specified DFN5X6-8L footprint and verify thermal management requirements align with the provided junction-to-ambient resistance ratings.

Selection Notes

Select this component for applications requiring a 100-V N-Channel MOSFET with low on-resistance and fast switching capabilities. Consider the DFN5X6-8L package size and thermal characteristics when designing the PCB layout. Evaluate the gate charge and threshold voltage to ensure compatibility with your driver circuitry. Verify that the continuous and pulsed current ratings meet the peak load requirements of your specific application.

Part Context

The AMR448N belongs to the family of N-Channel MOSFETs manufactured by Analog Power Inc., designed for power switching applications. These devices typically leverage trench technology to achieve low on-resistance and improved thermal performance. The product line targets efficiency improvements in DC/DC converters and motor control systems, offering a balance between voltage rating and current handling capability in compact surface-mount packages.

Replacement Considerations

Cross-reference with other 100-V N-Channel MOSFETs in the DFN5X6-8L package. Verify pinout compatibility and ensure that replacement parts meet or exceed the original's rDS(on), ID, and thermal resistance specifications. Check for any differences in gate charge or threshold voltage that might affect driver performance.

FAQ

What is the maximum drain-source voltage for the AMR448N?

The maximum drain-source voltage (VDS) for the AMR448N is 100 V.

What package type does the AMR448N use?

The AMR448N uses a DFN5X6-8L package.

What is the typical on-resistance at VGS = 10V?

The typical on-resistance (rDS(on)) at VGS = 10V is 5.6 mΩ.

AMR448N-CTAMR448N-CT
$0.77
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