AMR452N

$0.16

Description：MOSFET N-CH 100V 20A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:4e348f3e72af Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 20A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：404 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：23W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5.2x5.55)
Package / Case：8-PowerVDFN

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AMR452N

Overview

The AMR452N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 100 V and Gate-Source Voltage (VGS) of ±20 V. It offers a maximum on-resistance (RDS(on)) of 38 mΩ at VGS = 10 V and 50 mΩ at VGS = 4.5 V. Continuous drain current (ID) reaches 20 A at TC=25°C, 16 A at TC=70°C, 9.4 A at TA=25°C, and 7.5 A at TA=70°C. The device operates within a junction temperature range of -55 to 150 °C.

Feature Summary

Utilizes low RDS(on) trench technology for efficient conduction.
Features low thermal impedance for effective heat dissipation.
Provides fast switching speed suitable for high-frequency applications.

Applications

LED Inverter Circuits
DC/DC Conversion Circuits
Motor drives

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the DFN5X6-8L package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under your actual operating conditions.

Selection Notes

Select this component when a 100 V rating is required alongside low on-resistance characteristics. Consider the thermal performance metrics if operating in environments where case or ambient temperatures exceed standard levels. Evaluate gate charge parameters to ensure compatibility with your driver circuit capabilities for optimal switching efficiency.

Part Context

This part belongs to the Analog Power N-Channel MOSFET family, designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The device is housed in a DFN5X6-8L package, suitable for surface-mount assembly in compact electronic designs requiring reliable power management.