AO3400A

$0.39

Description：MOSFET N-CH 30V 5.7A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76e19d5bfa2c Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.7A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：26.5mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3400A

Overview

The AO3400A is a 30V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve extremely low on-resistance, making it suitable for load switching and PWM applications. The device features a maximum drain-source voltage of 30V and a continuous drain current of 5.7A at VGS=10V. On-resistance values are less than 26.5mΩ at VGS=10V, 32mΩ at VGS=4.5V, and 48mΩ at VGS=2.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in a SOT-23 package.

Feature Summary

Combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
Designed specifically for use as a load switch or in pulse-width modulation (PWM) applications.
Features fast switching characteristics including turn-on rise time of 2.5ns and turn-off fall time of 4ns.

Applications

Load switching circuits
Pulse-width modulation (PWM) applications

Procurement Notes

Verify the manufacturer source against official Alpha & Omega Semiconductor documentation to ensure component authenticity. Confirm that the specific batch matches the required electrical parameters, particularly the on-resistance thresholds at specified gate voltages. Ensure compliance with consumer market designations and verify that the application does not involve life support systems, which are explicitly excluded from qualification.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The SOT-23 package is ideal for surface-mount applications where board area is limited. Consider the threshold voltage range and gate charge requirements to ensure compatibility with the intended logic-level drive signals and switching frequencies.

Part Context

The AO3400A belongs to the family of low-voltage N-channel enhancement mode field effect transistors produced by Alpha & Omega Semiconductor. It is designed to offer high performance in a small footprint, leveraging trench technology to minimize power loss during conduction. This series is commonly utilized in portable electronics and battery-powered devices due to its efficiency and thermal characteristics.

Replacement Considerations

Direct substitutes include AO3400, SI2301, and SI2302. Verify pinout compatibility and electrical ratings such as breakdown voltage and current capacity before substitution.