AO3407

AO3407

  • Description:MOSFET P-CH 30V 4.1A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c59f327235f4 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 4.1A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:3-SMD, SOT-23-3 Variant

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AO3407

Overview

The AO3407 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent on-resistance with low gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of -30V and a continuous drain current of -4.1A at VGS = -10V. On-state resistance is less than 52mΩ at VGS = -10V and less than 87mΩ at VGS = -4.5V. It operates within a junction and storage temperature range of -55°C to 150°C.

Feature Summary

  • Advanced trench technology provides excellent RDS(ON) performance combined with low gate charge characteristics.
  • Designed specifically for use as a load switch or in pulse-width modulation (PWM) applications.

Applications

  • Load switching
  • Pulse-width modulation (PWM) applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before finalizing designs. Confirm that the component meets all intended electrical requirements, including thermal management constraints and absolute maximum ratings. Ensure compliance with applicable export control rules and regulations. Evaluate product suitability for the specific application environment.

Selection Notes

Select this component based on its -30V rating and -4.1A continuous current capacity. Consider the low gate charge values for switching efficiency. Verify that the required on-resistance levels are met at the specific gate drive voltages used in the circuit design. Assess thermal dissipation capabilities relative to the expected operating conditions.

Part Context

This part belongs to the AO34 series of MOSFETs produced by Alpha & Omega Semiconductor. It is a surface-mount device housed in an SOT-23 package. The component is designed for general-purpose switching tasks where compact size and efficient power handling are required.

Replacement Considerations

Check for direct pin-compatible alternatives from other manufacturers that match the -30V, -4.1A specifications and similar RDS(ON) values. Ensure any substitute maintains the same SOT-23 footprint and thermal characteristics.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±20V.

What is the typical total gate charge at VGS = -10V?

The typical total gate charge (Qg) at VGS = -10V is 9.2 nC.

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