SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO3407 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent on-resistance with low gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of -30V and a continuous drain current of -4.1A at VGS = -10V. On-state resistance is less than 52mΩ at VGS = -10V and less than 87mΩ at VGS = -4.5V. It operates within a junction and storage temperature range of -55°C to 150°C.
Verify the specific datasheet revision and manufacturer documentation before finalizing designs. Confirm that the component meets all intended electrical requirements, including thermal management constraints and absolute maximum ratings. Ensure compliance with applicable export control rules and regulations. Evaluate product suitability for the specific application environment.
Select this component based on its -30V rating and -4.1A continuous current capacity. Consider the low gate charge values for switching efficiency. Verify that the required on-resistance levels are met at the specific gate drive voltages used in the circuit design. Assess thermal dissipation capabilities relative to the expected operating conditions.
This part belongs to the AO34 series of MOSFETs produced by Alpha & Omega Semiconductor. It is a surface-mount device housed in an SOT-23 package. The component is designed for general-purpose switching tasks where compact size and efficient power handling are required.
Check for direct pin-compatible alternatives from other manufacturers that match the -30V, -4.1A specifications and similar RDS(ON) values. Ensure any substitute maintains the same SOT-23 footprint and thermal characteristics.
The maximum gate-source voltage is ±20V.
The typical total gate charge (Qg) at VGS = -10V is 9.2 nC.