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The AO3415A-EV is a P-channel enhancement mode field-effect transistor manufactured by EVVO. It features a drain-source voltage rating of -20V and a continuous drain current capacity of -4A at 25°C. The device utilizes a SOT-23 surface-mount package with a maximum power dissipation of 1.4W. Key electrical characteristics include a static drain-source on-resistance of 55mΩ at a gate-source voltage of -4.5V, an input capacitance of 950pF, and an ESD rating of 2500V under the Human Body Model standard.
Verify that the component designation strictly matches the AO3415A-EV suffix to ensure correct manufacturer sourcing from EVVO. Confirm the physical package type corresponds to the specified SOT-23 configuration. Validate that the part meets RoHS compliance standards as indicated in official documentation before finalizing procurement orders.
Select this component when a P-channel solution is required for low-side or high-side switching with a maximum voltage of 20V. The -4A current rating supports moderate load requirements. Ensure the application logic provides sufficient negative gate drive relative to the source to fully enhance the channel and minimize conduction losses.
This component belongs to the EVVO discrete semiconductor portfolio, which includes various MOSFETs, ESD protectors, and TVS diodes. The product line focuses on providing reliable switching solutions for consumer electronics and industrial systems requiring efficient power management components.
Cross-reference with AO3413 variants for similar P-channel specifications. Verify pinout compatibility and thermal performance metrics against alternative suppliers offering comparable -20V, -4A ratings.