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Product Detailed Parameters
- Description：MOSFET N-CH 55V 2.1A SOT23-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：160mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3422L is an N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. Key electrical parameters include a drain-source voltage (V_DSS) of 55 V, a continuous drain current (I_D) of 2.1 A at 25°C case temperature, and a maximum on-resistance (R_DS(on)) of 0.18 Ω at V_GS = 10 V. The device operates within a junction temperature range of -55°C to 175°C and is housed in a SOT-23 surface-mount package.
Feature Summary
- Advanced trench technology for optimized performance
- Low gate charge for efficient switching
- Surface-mount construction for automated assembly
Applications
- Battery protection circuits
- Power management modules
- Load switches in portable devices
Procurement Notes
Verify the specific suffix or variant against official Alpha & Omega Semiconductor documentation to confirm exact electrical ratings and packaging. Confirm RoHS compliance status and lead-free specifications directly from the manufacturer's datasheet before procurement. Ensure the component matches the required SOT-23-3 footprint and pinout configuration for your design.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate voltage handling and low on-resistance is required for space-constrained applications. Consider the thermal derating curves for continuous current operation above ambient temperatures. Verify that the gate drive voltage aligns with the specified thresholds for optimal R_DS(on) performance.
Part Context
This part belongs to the AO3422 series of single N-channel MOSFETs designed for general-purpose switching applications. The series emphasizes efficiency through low R_DS(on) and fast switching characteristics enabled by trench technology. It serves as a discrete solution for power control in consumer electronics and industrial systems requiring small form factors.
Replacement Considerations
The AO3422 is listed as a direct substitute. Verify pin compatibility and electrical parameter equivalence with official datasheets before substitution.
