AO3459

AO3459

  • Description:MOSFET P-CH 30V 2.6A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c18c0310eb88 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 2.6A SOT23-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:110mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:197 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:3-SMD, SOT-23-3 Variant

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AO3459

Overview

The AO3459 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switching and PWM applications. The device operates with a drain-source voltage of -30V and supports a continuous drain current of -2.6A at VGS = -10V. Key electrical parameters include an on-resistance of less than 130mΩ at VGS = -10V and less than 200mΩ at VGS = -4.5V.

Feature Summary

  • Advanced trench technology provides excellent RDS(ON) performance and low gate charge characteristics.

Applications

  • Load switch circuits
  • Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific datasheet version and ordering suffixes when sourcing. Confirm RoHS compliance status as standard products meet specifications while 'L' variants offer green product options. Ensure the component matches the required package type and electrical ratings for the target design before procurement.

Selection Notes

Select this component for designs requiring efficient P-channel switching with moderate current capabilities. Evaluate the on-resistance requirements against the available gate drive voltages to ensure optimal conduction losses. Consider the thermal management needs based on the specified power dissipation limits in the final application environment.

Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically designed for general-purpose switching tasks. It serves as a complement to N-channel devices in bridge configurations or single-ended high-side switching applications within consumer electronics and industrial control systems.

Replacement Considerations

AO3409 is electrically identical to AO3459 according to manufacturer documentation. Verify pinout compatibility and package dimensions before substituting.

AO3459AO3459

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