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The AO4402 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 12A. The device exhibits an on-resistance (Rds(on)) of less than 14mΩ at Vgs=10V, less than 16mΩ at Vgs=4.5V, and less than 22mΩ at Vgs=2.5V.
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the received parts match the AO4402 designation and adhere to the specified electrical limits. Ensure compatibility with the intended circuit design regarding thermal management and gate drive requirements before integration into production.
Select this component for designs requiring high efficiency in low-voltage environments. The ability to operate effectively with a 2.5V gate drive makes it suitable for battery-powered or logic-level controlled systems. Evaluate the thermal performance under maximum load conditions to ensure reliability within the specified operating temperature range.
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically engineered for power switching applications. The AO4402 represents a solution for compact, high-efficiency power management where low conduction losses and fast switching speeds are critical. It is housed in surface-mount packages suitable for automated assembly processes.
The AO4402 supports operation with gate voltages as low as 2.5V.
It is an N-Channel Enhancement Mode Field Effect Transistor.