AO4423

$0.85

Description：MOSFET P-CH 30V 17A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:42276960dcc1 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 17A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 20V
Rds On (Max) @ Id, Vgs：6.2mOhm @ 15A, 20V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：3033 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4423

Overview

The AO4423 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent on-state resistance and ultra-low gate charge, featuring a 25V gate rating. The device is designed for use as a load switch or in PWM applications. It is ESD protected and undergoes 100% UIS and Rg testing. Standard products are Pb-free compliant with RoHS and Sony 259 specifications.

Feature Summary

Advanced trench technology provides excellent on-state resistance and ultra-low gate charge
ESD protection rated at 6000V HBM
100% Unclamped Inductive Switching (UIS) tested
100% Gate Resistance (Rg) tested

Applications

Load switch applications
PWM applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The AO4423L variant represents a Green Product option that is electrically identical to the standard AO4423. Confirm compliance requirements such as RoHS and Sony 259 specifications against the datasheet before procurement to ensure the correct package and environmental attributes are obtained.

Selection Notes

Select this component for low-side switching tasks requiring high efficiency and fast switching speeds. The P-Channel configuration is suitable for high-side load control where negative gate drive logic is available. Ensure the application voltage does not exceed the -30V drain-source breakdown limit and consider thermal management based on the junction-to-ambient resistance values provided in the datasheet.

Part Context

This component belongs to the Alpha & Omega Semiconductor discrete semiconductor transistor family. It is specifically categorized as a P-Channel MOSFET utilizing enhancement mode field effect technology. The device is housed in an SOIC-8 surface-mount package, providing a compact solution for power management circuits in portable and industrial electronics.