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The AO4466 is a 30V N-Channel MOSFET manufactured by UMW. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features separated source leads to facilitate Kelvin connections that bypass source inductance. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 10A at 25°C, and maximum ratings of 36V breakdown and 62A pulsed current.
Verify the manufacturer designation matches UMW (UTD Semiconductor Co., Limited) rather than other vendors producing similar part numbers. Confirm the package type is SOP-8 and the delivery mode is tape and reel with a base quantity of 3000 units. Ensure the component is intended for consumer market applications and not critical life support systems.
Select this component for designs requiring a 30V N-Channel MOSFET with low RDS(ON). Consider the separated source lead design if minimizing source inductance effects is necessary for high-speed switching. Evaluate thermal performance based on the specific board copper area and ambient temperature conditions.
The AO4466 belongs to the family of N-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductors and licensed or manufactured by UMW. These devices are designed for power management solutions in consumer electronics, computing, and industrial systems.
Cross-reference with AO4468 from Alpha & Omega Semiconductors for potential functional equivalents within the same product family.