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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6.9A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SC-74, SOT-457
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Overview
The AO6400 is a 30V N-Channel MOSFET utilizing advanced trench technology. It provides excellent RDS(ON) and low gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 6.9A at VGS=10V. The on-resistance is less than 28mΩ at VGS=10V, less than 33mΩ at VGS=4.5V, and less than 52mΩ at VGS=2.5V.
Feature Summary
- Advanced trench technology for enhanced performance
- Low gate charge characteristics
- Compatible with low gate drive voltages down to 2.5V
Applications
- Load switch applications
- PWM (Pulse Width Modulation) control circuits
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as multiple vendors including Guangdong Kexin, VBsemi, and others produce parts with this designation. Confirm that the datasheet specifications match your design requirements, particularly regarding the on-resistance thresholds at different gate voltages. Ensure the device meets the necessary thermal and electrical standards for your intended load switch or PWM application.
Selection Notes
Select the AO6400 for designs requiring efficient switching with minimal gate drive power. Its capability to operate effectively at VGS levels as low as 2.5V makes it suitable for logic-level control interfaces. The low on-resistance values across various gate voltages ensure high efficiency in power delivery paths where voltage drop minimization is critical.
Part Context
This component belongs to the Alpha & Omega Semiconductor lineup of N-Channel enhancement mode field effect transistors. It is designed for general-purpose switching applications where low on-state resistance and fast switching speeds are required. The part is commonly used in portable electronics and battery-powered devices due to its efficiency and compatibility with low-voltage logic signals.
