AO6810

AO6810

$0.13
  • Description:MOSFET 2N-CH 30V 3.5A 6TSOP
  • Series:-

SKU:fa8562046442 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 3.5A 6TSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.5A
  • Rds On (Max) @ Id, Vgs:50mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:210pF @ 15V
  • Power - Max:1.15W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

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AO6810

Overview

The AO6810 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance characteristics. The device features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 3.1A at VGS = 10V. The maximum on-resistance (RDS(ON)) is specified as less than 77mΩ at VGS = 10V and less than 120mΩ at VGS = 4.5V. Standard product variants are lead-free, complying with ROHS and Sony 259 specifications.

Feature Summary

  • Advanced trench technology for optimized performance
  • Low gate charge capability
  • Lead-free construction meeting environmental standards

Applications

  • Load switch applications
  • PWM (Pulse Width Modulation) control circuits

AO6810AO6810
$0.13
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