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The AO6810 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance characteristics. The device features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 3.1A at VGS = 10V. The maximum on-resistance (RDS(ON)) is specified as less than 77mΩ at VGS = 10V and less than 120mΩ at VGS = 4.5V. Standard product variants are lead-free, complying with ROHS and Sony 259 specifications.