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The AOB11C60 is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, packaged in TO-263 (D2PAK). It features a drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.44Ω at VGS=10V and ID=5.5A. Key electrical parameters include a typical gate charge of 30nC, an avalanche energy rating of 750mJ, and a power dissipation capacity of 11W. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific package variant matches the required footprint, as this part number corresponds to the TO-263 D2PAK configuration. Confirm that the component meets Halogen-Free specifications if required by design constraints; otherwise, verify standard compliance against the manufacturer's datasheet revision. Ensure sourcing channels provide authentic components from Alpha & Omega Semiconductor Inc. to maintain specified electrical characteristics.
Select this component for designs requiring a 600V N-channel MOSFET in a surface-mount D2PAK package. Consider its 11A continuous current rating and 0.44Ω maximum on-resistance for efficiency requirements. The guaranteed avalanche ruggedness makes it suitable for applications involving inductive loads or potential voltage spikes. Evaluate thermal management needs based on the 11W power dissipation limit at 25°C case temperature.
The AOB11C60 belongs to the AOT11C60 family, which includes variants in different packages such as TO-220 (AOT11C60) and TO-220F (AOTF11C60). All variants share identical electrical characteristics but differ in thermal resistance and physical mounting style. The 'L' suffix indicates a Halogen-Free version of these parts. This series is positioned for general-purpose high-voltage switching in consumer electronics.
Direct substitutes within the same family include AOT11C60 and AOTF11C60, differing only in package type. For equivalent electrical performance in alternative packages, verify pinout compatibility and thermal resistance values against the target application's PCB layout and heatsinking capabilities.
Yes, the datasheet specifies a repetitive avalanche energy rating of 60mJ and confirms 100% UIS testing.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±30V.