AOB11C60

AOB11C60

  • Description:MOSFET N-CH 600V 11A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:681385df703a Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 11A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:440mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):278W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB11C60

Overview

The AOB11C60 is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, packaged in TO-263 (D2PAK). It features a drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.44Ω at VGS=10V and ID=5.5A. Key electrical parameters include a typical gate charge of 30nC, an avalanche energy rating of 750mJ, and a power dissipation capacity of 11W. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Fabricated using an advanced high-voltage MOSFET process designed for robust performance in AC-DC applications.
  • Features guaranteed avalanche capability with 100% UIS testing to ensure reliability under inductive switching conditions.
  • Optimized for low RDS(on), Ciss, and Crss to facilitate rapid adoption in offline power supply designs.

Applications

  • Offline power supply designs
  • AC-DC converter circuits

Procurement Notes

Verify the specific package variant matches the required footprint, as this part number corresponds to the TO-263 D2PAK configuration. Confirm that the component meets Halogen-Free specifications if required by design constraints; otherwise, verify standard compliance against the manufacturer's datasheet revision. Ensure sourcing channels provide authentic components from Alpha & Omega Semiconductor Inc. to maintain specified electrical characteristics.

Selection Notes

Select this component for designs requiring a 600V N-channel MOSFET in a surface-mount D2PAK package. Consider its 11A continuous current rating and 0.44Ω maximum on-resistance for efficiency requirements. The guaranteed avalanche ruggedness makes it suitable for applications involving inductive loads or potential voltage spikes. Evaluate thermal management needs based on the 11W power dissipation limit at 25°C case temperature.

Part Context

The AOB11C60 belongs to the AOT11C60 family, which includes variants in different packages such as TO-220 (AOT11C60) and TO-220F (AOTF11C60). All variants share identical electrical characteristics but differ in thermal resistance and physical mounting style. The 'L' suffix indicates a Halogen-Free version of these parts. This series is positioned for general-purpose high-voltage switching in consumer electronics.

Replacement Considerations

Direct substitutes within the same family include AOT11C60 and AOTF11C60, differing only in package type. For equivalent electrical performance in alternative packages, verify pinout compatibility and thermal resistance values against the target application's PCB layout and heatsinking capabilities.

FAQ

Is the AOB11C60 rated for repetitive avalanche operation?

Yes, the datasheet specifies a repetitive avalanche energy rating of 60mJ and confirms 100% UIS testing.

What is the maximum gate-source voltage for the AOB11C60?

The absolute maximum rating for Gate-Source Voltage (VGS) is ±30V.

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