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Product Detailed Parameters
- Description：LINEAR IC
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：27A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：16700 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：10W (Ta), 375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB66216L is a 120V N-Channel AlphaSGT power MOSFET utilizing advanced Trench Power MOSFET technology. It is designed for high efficiency and robust performance in medium voltage applications. The device features an N-Channel configuration with a Drain-to-Source Voltage (Vdss) of 120V. It is housed in a TO-263 package, suitable for surface mount installation. The component operates within a standard temperature range typical for industrial power semiconductors.
Feature Summary
- Utilizes advanced AlphaSGT Trench Power MOSFET technology for enhanced efficiency
- Designed for robust performance in medium voltage switching applications
- N-Channel configuration optimized for low on-resistance characteristics
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply modules
Procurement Notes
Verify the specific package variant and thermal specifications against the official Alpha & Omega Semiconductor datasheet before integration. Ensure that the sourcing channel provides authentic components with traceable documentation to guarantee reliability in critical power electronics designs.
Selection Notes
Select this component for applications requiring a 120V N-Channel MOSFET with high efficiency. Consider the TO-263 package constraints for thermal management and PCB layout. Compare on-resistance and gate charge parameters against alternative devices to ensure optimal system performance.
Part Context
This part belongs to the AlphaSGT series from Alpha & Omega Semiconductor Inc., which focuses on medium voltage power MOSFETs. The series leverages trench technology to deliver improved switching speeds and reduced conduction losses compared to traditional planar structures.
Replacement Considerations
Check for direct pin-compatible substitutes within the same voltage class. Verify that any replacement maintains or exceeds the 120V Vdss rating and fits the TO-263 footprint.
