AOD2816

$0.30

Description：MOSFET N-CH 80V 8.5A/35A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:9ef9f4493899 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 8.5A/35A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1109 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 53.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD2816

Overview

The AOD2816 is an 80V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a drain-source voltage of 80V and a continuous drain current of 35A at VGS=10V. The on-resistance is less than 15mΩ at VGS=10V and less than 29mΩ at VGS=6V. The device supports a maximum junction temperature range from -55°C to 175°C.

Feature Summary

Trench MOSFET technology designed for efficient high-frequency switching performance.
Minimized conduction and switching power losses through low RDS(ON) and capacitance values.
Validated with 100% Unclamped Inductive Switching (UIS) testing.

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific package variant, as the datasheet references TO252 (DPAK). Confirm thermal requirements against the specified junction-to-case resistance of 2.8°C/W and ambient resistance of 50°C/W. Ensure compatibility with the 80V rating and 35A continuous current limits for the target circuit design.

Selection Notes

Select this component for applications requiring robust high-frequency switching capabilities within an 80V system. The low gate charge and fast switching times make it suitable for space-constrained designs like LED backlighting. Evaluate thermal management needs based on the specified power dissipation ratings at various case temperatures.

Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of power MOSFETs. It is designed to replace older discrete solutions in power conversion circuits by offering improved efficiency and reduced heat generation due to its optimized trench structure and low internal resistance characteristics.

Replacement Considerations

Check pinout compatibility if substituting other 80V N-Channel MOSFETs in DPAK packages. Verify that replacement devices meet or exceed the 35A continuous current and 80V breakdown voltage specifications to maintain circuit integrity.