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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8A/19A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：432 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：4.2W (Ta), 21W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD4102L is a single N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a Drain-Source Voltage (V_DSS) of 30V and continuous Drain Current (I_D) ratings of 8A at case temperature and 19A at ambient temperature. Maximum on-resistance (R_DS(on)) is specified at 37mΩ. It operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Advanced trench technology for optimized performance
- Low on-resistance characteristics
- Reduced gate charge for efficient switching
Applications
- Power supply units
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific suffix 'L' against official Alpha & Omega Semiconductor documentation to confirm package variations or tape-and-reel specifications. Ensure compatibility with TO-252-3 surface mount requirements. Cross-reference electrical parameters with current datasheets as component revisions may occur. Confirm availability status directly with authorized distributors, as obsolete status affects long-term sourcing.
Selection Notes
Select this component for applications requiring 30V blocking capability and moderate current handling in surface-mount designs. Evaluate thermal management needs given the 8A/19A current ratings. Compare R_DS(on) values against alternative trench MOSFETs for efficiency optimization. Ensure gate drive voltage aligns with the specified threshold requirements for full enhancement.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete power device portfolio, which targets high-volume electronics including consumer devices, industrial controls, and automotive electronics. The manufacturer integrates process technology and packaging know-how to deliver power management solutions. The TO-252-3 package is standard for surface-mount power applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases for cross-reference lists based on matching V_DSS, I_D, and R_DS(on) specifications.
