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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 40V 40A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2550 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：62.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD4185L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It features a Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -40A at VGS = -10V. The device exhibits a maximum On-Resistance (RDS(ON)) of less than 15mΩ at VGS = -10V and less than 20mΩ at VGS = -4.5V. Key dynamic parameters include a total gate charge (Qg) of 55nC at -10V and an input capacitance (Ciss) of 2550pF. The component operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Advanced trench technology providing low on-resistance and reduced gate charge for efficient switching.
- High current handling capability with excellent thermal resistance in the DPAK/IPAK package.
- Validated reliability through 100% Unclamped Inductive Switching (UIS) testing.
Applications
- High current power management circuits
- Synchronous rectification applications
- DC-DC converter designs
Procurement Notes
Verify that the specific suffix 'L' corresponds to the standard AOD4185 specifications provided in the datasheet, as ordering suffixes may indicate variations in packaging or manufacturing lot codes rather than electrical differences. Confirm RoHS compliance status and ensure the supplier provides the original manufacturer's documentation for the exact part number variant being procured.
Selection Notes
Select this component for applications requiring robust P-channel switching with high current capacity up to 40A. Consider the thermal performance characteristics when designing heatsinking solutions, particularly for steady-state operations. Ensure the gate drive voltage meets the requirements for optimal RDS(ON) performance at either -4.5V or -10V levels.
Part Context
The AOD4185 belongs to the AOD series of P-Channel MOSFETs from Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve superior on-resistance compared to standard planar devices. The component is housed in a TO-252 (DPAK) or TO-251 (IPAK) surface-mount package, designed for efficient heat dissipation in compact electronic assemblies.
Replacement Considerations
The AOI4185 is documented as a companion N-Channel device often paired with the AOD4185. Direct substitution requires verifying pinout compatibility and ensuring the replacement part meets the same voltage, current, and thermal ratings specified in the design requirements.
