ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 4A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD4N60 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (V_DSS) of 600 V and a continuous drain current (I_D) of 4 A at case temperature. The device is housed in a TO-252 (DPAK) surface-mount package with a maximum power dissipation of 104 W at case temperature. Key electrical parameters include a gate charge (Q_G) of 12 nC at 10 V, an input capacitance (C_iss) of 370 pF at 25 V, and a gate-source threshold voltage (V_GS(th)) of 4.5 V at 250 µA. The operating junction temperature range spans from -55°C to 150°C.
Feature Summary
- High-voltage capability with 600 V drain-source breakdown voltage for robust switching applications.
- Surface-mount TO-252 package design facilitates automated assembly and efficient thermal management.
- Low gate charge characteristics support high-frequency operation and reduced switching losses.
Applications
- High-voltage DC-DC converter circuits
- Motor control systems requiring N-channel switching
- Power supply output stages
Procurement Notes
Verify the specific ordering suffix and tape/reel quantity requirements against the manufacturer's latest datasheet before procurement. Confirm that the component meets RoHS compliance standards if required by your manufacturing process. Ensure the supplier provides valid traceability documentation for this discontinued or legacy part number to maintain quality assurance protocols during production integration.
Selection Notes
Select this component when a 600 V rating is necessary for high-side or low-side switching in compact surface-mount designs. The TO-252 package offers a balance between current handling capacity and board space efficiency compared to through-hole alternatives. Evaluate thermal resistance requirements carefully, as the 104 W dissipation rating is dependent on adequate heatsinking and copper area on the PCB.
Part Context
This N-channel MOSFET belongs to Alpha & Omega Semiconductor's general-purpose power transistor lineup. It is designed for applications requiring reliable performance in medium-power switching environments. The TO-252 form factor is widely used in consumer electronics and industrial equipment where space constraints limit the use of larger packages while still demanding significant current handling capabilities.
Replacement Considerations
Direct substitutes may include other 600 V N-channel MOSFETs in the TO-252 package with comparable I_D and R_DS(on) values. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with manufacturers such as Vishay, ON Semiconductor, or Infineon for equivalent specifications.
