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The AOD536 is a 30V N-Channel AlphaMOS (αMOS LV) trench power MOSFET in a TO-252 package. It features low RDS(ON) of less than 8.5mΩ at VGS=10V and less than 14.7mΩ at VGS=4.5V, with a continuous drain current of 46A at VGS=10V. The device supports a maximum junction temperature of 175°C and includes 100% UIS and Rg testing.
Verify the specific ordering suffix to confirm the tape and reel quantity of 2500 units per package. Ensure the component meets RoHS and halogen-free compliance requirements for your manufacturing process. Confirm that the TO-252 form factor aligns with your PCB footprint design before finalizing procurement.
Select this component for applications requiring robust avalanche energy handling and low switching losses. The low gate charge facilitates efficient drive circuitry design. Evaluate thermal management needs based on the junction-to-case resistance for high-current scenarios.
This part belongs to Alpha & Omega Semiconductor's AlphaMOS product line, designed for general-purpose power switching. It is manufactured using advanced trench technology to minimize conduction losses while maintaining high reliability under inductive load conditions.
Check datasheets for alternative 30V N-Channel MOSFETs in TO-252 packages. Verify pinout compatibility, specifically Drain, Gate, and Source alignment. Compare RDS(ON) and thermal resistance values to ensure equivalent or superior performance in the target application.
The maximum junction and storage temperature range is -55°C to 175°C.
Yes, the AOD536 undergoes 100% Unclamped Inductive Switching (UIS) testing.