AOD7S60

$2.04

Description：MOSFET N-CH 600V 7A TO252
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d156108bf535 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOD7S60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 7A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOD7S60

Description：MOSFET N-CH 600V 7A TO252
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：372 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AOD7S60

AOD7S60

Single FETs, MOSFETs Overview

The AOD7S60 is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM high-voltage process. It features a drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device has a maximum on-resistance of 0.6Ω at VGS=10V and ID=3.5A. Key dynamic parameters include a typical gate charge of 8.2nC and an output capacitance energy (Eoss) of 1.9mJ at 400V. It supports a peak pulsed drain current of 33A and offers 100% UIS testing.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced aMOSTM high-voltage process for robust switching performance.
Guaranteed avalanche capability with 100% UIS testing for enhanced reliability.
Optimized low RDS(on), gate charge, and Eoss for efficient offline power supply designs.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high robustness
General-purpose power transistor circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific package markings against official datasheets. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Validate that the intended application does not involve life support systems without explicit authorization.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing avalanche ruggedness and low gate charge in medium-current applications. Evaluate thermal management requirements based on the junction-to-case thermal resistance. Consider the 600V rating for standard offline converter topologies. Verify compatibility with driving voltages given the threshold voltage characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the AOD series of N-channel MOSFETs in the TO-252 (DPAK) package. It is designed as a replacement for legacy components in offline power supplies where avalanche energy handling is critical. The aMOSTM technology differentiates it from standard planar processes by offering improved switching efficiency and ruggedness.