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The AOGT66909 is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ Trench technology. It features a maximum drain-source voltage of 100V and a continuous drain current of 366A at VGS=10V. The device exhibits a low on-resistance of less than 1.5mΩ at VGS=10V and less than 1.7mΩ at VGS=8V. It supports a maximum junction temperature of 175°C and includes top cooling capabilities within its GTPAK™ package.
Verify the specific ordering suffix to confirm the tape and reel packaging format. Ensure compliance with RoHS 2.0 and halogen-free requirements as stated in the datasheet. Confirm that the component meets the intended application's electrical and thermal specifications before integration.
Select this component for high-current applications requiring low conduction losses. The 175°C maximum junction temperature rating allows for robust operation under elevated thermal conditions. Verify that the PCB layout supports the GTPAK™ package dimensions and thermal dissipation needs.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power switching applications. It is housed in a GTPAK™ package, which facilitates efficient heat dissipation through the top surface. The device is suitable for demanding environments where reliability and thermal management are critical.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum junction temperature is 175°C.
Yes, the device is 100% UIS tested.