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Product Detailed Parameters
- Description：MOSFET P-CH 30V 23A/70A TO251A
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2830 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：6.2W (Ta), 78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI21357 is a surface-mount P-channel MOSFET from Alpha & Omega Semiconductor, housed in a TO-251A (IPAK) tube package. It features a drain-source voltage of -30V and a continuous drain current of -70A at VGS=-10V. The device utilizes advanced trench technology to achieve a low on-resistance of less than 8mΩ at VGS=-10V and less than 13mΩ at VGS=-4.5V. It supports a maximum junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced trench technology for optimized performance
- Low on-resistance across standard gate drive voltages
- High current capability suitable for power switching
- Validated reliability through 100% UIS and Rg testing
Applications
- Notebook AC-in load switch
- Battery protection charge/discharge circuits
Procurement Notes
Verify the specific ordering suffix and package configuration against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the intended application does not involve life support systems, as such usage is explicitly unauthorized by the manufacturer.
Selection Notes
Select this component for applications requiring robust P-channel switching with high current handling capabilities. Consider the thermal resistance characteristics when designing heatsinking solutions. Evaluate the gate threshold voltage and total gate charge parameters to ensure compatibility with the driving logic levels and switching frequency requirements of the target circuit design.
Part Context
This part belongs to the AOD21357/AOI21357 product family manufactured by Alpha & Omega Semiconductor Inc. The company specializes in power semiconductors, including MOSFETs and IGBTs. The AOI21357 variant specifically denotes the TO-251A tube packaging option, distinct from the tape-and-reel TO-252 DPAK version.
Replacement Considerations
The AOD21357 serves as the direct functional equivalent within the same family, differing primarily in its TO-252 DPAK tape-and-reel packaging format rather than electrical specifications.
