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AOI600A70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 8.5A TO251A. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOI600A70
- Description：MOSFET N-CH 700V 8.5A TO251A
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
Single FETs, MOSFETs datasheet and documents for AOI600A70
Single FETs, MOSFETs Overview
The AOI600A70 is a plastic encapsulated N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a 700V drain-source voltage rating and an 8.5A continuous drain current capability at case temperature. The device offers a maximum on-resistance of 600 milliohms at 10V gate drive. Key reliability metrics include a calculated Mean Time To Failure (MTTF) of 29,919 years and a Failure In Time (FIT) rate of 3.82 per billion hours. It operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Proprietary aMOS5 technology for optimized switching parameters and enhanced body diode robustness
- High thermal stability with verified performance under extreme environmental stress conditions
- Low on-resistance characteristics supporting efficient power management in compact packages
Single FETs, MOSFETs Applications
- Flyback converters for Switch Mode Power Supplies (SMPS)
- Charger and PD adapter designs
- Television and lighting systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'A' against official datasheets to confirm package type and electrical tolerances. Confirm RoHS3 compliance status through manufacturer documentation prior to integration. Ensure design margins account for the specified thermal resistance and junction temperature limits during operation.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring robust reverse recovery characteristics. The TO-252 package suits surface-mount designs needing moderate current handling. Evaluate thermal management requirements based on the 104W power dissipation rating at case temperature.
Single FETs, MOSFETs Part Context
This part belongs to the aMOS5 family of N-channel power transistors designed for general-purpose power switching. It shares architectural similarities with other high-voltage MOSFETs in the AOD/AOI series, focusing on balancing low conduction losses with fast switching speeds for modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes require matching 700V Vds, similar Rds(on), and compatible TO-252 packaging. Verify pinout compatibility and thermal characteristics before substitution.
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