AOK20120XSD

Overview

The AOK20120XSD is a dual Silicon Carbide Schottky Barrier Diode in a TO-247-3L package. It features a 1200 V repetitive peak reverse voltage and a maximum operating junction temperature of 175°C. Each leg supports a continuous forward current of 31 A at 25°C case temperature, with a typical forward voltage of 1.45 V at 10 A. The device utilizes proprietary αSiC technology to achieve negligible reverse recovery current and improved switching losses compared to silicon bipolar diodes.

Feature Summary

• Proprietary αSiC Schottky Barrier Diode technology
• Negligible reverse recovery current
• Positive temperature coefficient for ease of paralleling

Applications

• EV Charger
• Solar Inverters
• Motor Drives
• UPS
• SMPS

Procurement Notes

Verify the specific ordering part number against the manufacturer's official documentation to ensure correct package type and shipping quantity. Confirm that the application environment remains within the specified thermal limits and does not involve life support systems, as these uses are explicitly unauthorized by the manufacturer.

Selection Notes

Select this component for high-voltage applications requiring low switching losses and high-temperature operation up to 175°C. The positive temperature coefficient facilitates parallel operation for higher current handling. Ensure the design accounts for the specific thermal resistance values provided in the datasheet for accurate power dissipation calculations.

Part Context

This component belongs to Alpha & Omega Semiconductor's αSiC product line, utilizing Silicon Carbide technology for superior performance over traditional silicon devices. The dual configuration in a single TO-247-3L package allows for compact designs in bridge rectifier or synchronous rectifier topologies.

Replacement Considerations

Public confirmed substitute part numbers: None available.