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AOK40120XSD
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Product Detailed Parameters
- Description：DIODE ARRAY SIC 1200V 60A TO-247
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：60A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The AOK40120XSD is a dual silicon carbide Schottky diode manufactured by Alpha & Omega Semiconductor. It features a 1200V reverse voltage rating and is housed in a TO-247-3 through-hole package. The device utilizes Silicon Carbide (SiC) technology to achieve low forward voltage characteristics, ranging from 1.8V to 1.95V at specified currents. With a reverse current specification between 10µA and 185µA, it is designed for high-efficiency power conversion applications requiring robust thermal performance and fast switching capabilities typical of wide bandgap semiconductors.
Feature Summary
- Dual common cathode configuration within a single package
- Silicon Carbide (SiC) construction for enhanced thermal stability
- High reverse voltage capability suitable for industrial power systems
Applications
- Industrial power supply units
- High-voltage DC-DC converters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific forward voltage binning and reverse leakage current limits against your circuit requirements, as these parameters vary across the documented ranges. Confirm that the TO-247-3 lead form matches your PCB footprint or chassis mounting constraints. Ensure thermal management solutions are adequate for the expected power dissipation levels under continuous operation conditions.
Selection Notes
Select this component when designing circuits requiring high blocking voltage with minimized switching losses. The SiC material offers superior performance compared to standard silicon diodes in high-temperature environments. Consider the dual package option if space efficiency is critical for common cathode rectification topologies.
Part Context
This part belongs to Alpha & Omega Semiconductor's Silicon Carbide Schottky Diode series, targeting high-power industrial applications. It complements other AOS wide bandgap devices by providing a reliable solution for high-voltage rectification where efficiency and thermal resilience are paramount design drivers.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
