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The AOK40B65HQ2 is a 650V, 40A AlphaIGBT featuring an integrated soft and fast recovery anti-parallel diode. It operates within a junction temperature range of -55°C to 175°C and utilizes a TO-247 package. Key electrical parameters include a collector-emitter saturation voltage of 2.05V at 25°C and 40A, with a maximum gate-emitter voltage of ±30V. The device exhibits a total gate charge of 61nC and switching energies of 1.19mJ (turn-on) and 0.38mJ (turn-off) at 175°C. Thermal resistance from junction to case is 0.48°C/W for the IGBT and 1.2°C/W for the diode.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging form and compliance status. Confirm that the component meets all applicable RoHS and REACH requirements before integration into final designs. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring high current handling up to 40A and robust voltage ratings of 650V. Consider the TO-247 package for through-hole mounting and efficient heat dissipation. Evaluate the switching energy parameters against system efficiency targets, particularly noting the impact of junction temperature on saturation voltage and switching losses.
This part belongs to the AlphaIGBT series manufactured by Alpha & Omega Semiconductor Inc. It is designed as a high-performance power switch combining IGBT and diode functionalities in a single package. The product is intended for industrial power conversion applications where reliability and switching efficiency are critical.
No public confirmed substitute part numbers are available in the source material.
The maximum continuous collector current is 40A at a case temperature of 100°C and 30A at a case temperature of 25°C.
The typical reverse recovery time (trr) is 143ns at TJ=175°C and 215ns at TJ=25°C, measured under specific test conditions.
The maximum thermal resistance from junction to case is 0.48°C/W for the IGBT and 1.2°C/W for the diode.