AOM033V120X2

$15.16

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:420457c1e35f Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM033V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM033V120X2

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：2.8V @ 17.5mA
Gate Charge (Qg) (Max) @ Vgs：104 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2908 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：300W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM033V120X2

AOM033V120X2

Single FETs, MOSFETs Overview

The AOM033V120X2 is a 1200 V αSiC Silicon Carbide Power MOSFET from Alpha & Omega Semiconductor Inc. It utilizes proprietary αSiC technology and features an optimized TO-247-4L package with a Kelvin source pin to minimize parasitic inductance. The device offers a typical on-resistance of 33 mΩ at 15V gate drive, supporting a continuous drain current of 68A at 25°C case temperature and a pulsed current of 120A. It operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Proprietary αSiC MOSFET technology enabling low loss and fast switching speeds
Optimized 15V gate drive voltage for broad driver compatibility
Robust body diode characteristics with low reverse recovery charge (Qrr)
Kelvin source pin configuration reduces internal loop inductance

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
UPS Systems
SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact shipping quantities and packaging formats. Ensure that any requested part numbers match the standard designation AOM033V120X2 exactly. Confirm compliance with RoHS directives and check for any recent product change notices regarding manufacturing sources or material composition updates before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion applications requiring robust performance at elevated temperatures. The TO-247-4L package facilitates effective thermal management through its dedicated Kelvin source terminal. Consider the 15V gate drive requirement when designing the driver circuitry to ensure optimal switching performance and compatibility with standard gate drivers.

Single FETs, MOSFETs Part Context

This silicon carbide MOSFET belongs to Alpha & Omega Semiconductor's αSiC family, designed to replace traditional silicon devices in demanding power electronics environments. The TO-247-4L form factor provides a standardized mounting solution for industrial and automotive-grade power modules, ensuring mechanical reliability alongside electrical performance in high-voltage systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1200V rating, 33mΩ RDS(on), and TO-247-4L package. Verify that alternative components support the same 15V gate drive requirements and possess comparable Qrr values to maintain system efficiency without redesigning the gate drive or snubber circuits.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

How does the TO-247-4L package improve performance?

The four-lead design includes a separate Kelvin source pin that isolates the gate drive path from the main current flow, reducing parasitic inductance and improving switching stability.