Single FETs, MOSFETs AON1605 product image

AON1605

$0.05
  • Description:MOSFET P-CH 20V 700MA 3DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:f8f19bdc05c4 Category: Brand:

  
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AON1605 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 20V 700MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON1605

  • Description:MOSFET P-CH 20V 700MA 3DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:710mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.75 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-DFN (1.0 x 0.60)
  • Package / Case:3-UFDFN

Single FETs, MOSFETs datasheet and documents for AON1605

AON1605

Single FETs, MOSFETs Overview

The AON1605 is a P-Channel MOSFET utilizing advanced trench technology in a DFN 1.0x0.6 package. It features a Drain-Source Voltage (VDS) of -20V and a Gate-Source Voltage (VGS) of ±8V. The device supports a continuous drain current (ID) of -0.7A at 25°C and -0.55A at 70°C, with a pulsed drain current (IDM) of -2A. On-resistance (RDS(ON)) is less than 710mΩ at VGS=-4.5V, 930mΩ at VGS=-2.5V, and 1250mΩ at VGS=-1.8V. Power dissipation is 0.9W at 25°C and 0.55W at 70°C. Junction temperature range is -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Advanced trench MOSFET technology for high performance
  • Compact DFN 1.0 x 0.6 surface-mount package
  • Typical ESD protection rated at HBM Class 1C

Single FETs, MOSFETs Applications

  • Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before implementation. Confirm that the DFN 1.0x0.6 footprint matches the target PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage load switching where minimal board space is available. Evaluate gate drive voltage levels to ensure RDS(ON) remains within acceptable limits for the application. Consider the small package thermal characteristics when determining power dissipation requirements.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of power semiconductors designed for portable and industrial electronics. The company specializes in trench MOSFET technologies optimized for efficiency and compact form factors suitable for modern consumer and computing devices.

Single FETs, MOSFETs Replacement Considerations

No public substitute part numbers are documented for this discontinued or specific model variant.

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