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AON6792 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 44A/85A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6792 is a 30V N-Channel MOSFET utilizing Alpha & Omega Semiconductor's SRFET technology, which integrates an internal Schottky diode. It features a DFN 5x6 package and supports a continuous drain current of 85A at VGS=10V with a maximum on-resistance below 2mΩ. The device is rated for a pulsed drain current of 85A and includes comprehensive testing for Unclamped Inductive Switching (UIS) and gate resistance.
Verify the specific ordering suffix and package configuration against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as specified in the datasheet. Ensure the intended application does not involve life support devices or critical systems, as these uses are explicitly unauthorized by the manufacturer.
Select this component for designs requiring low voltage drop and high current handling within a compact footprint. The integrated Schottky diode makes it suitable for synchronous rectification or freewheeling applications where soft recovery characteristics are beneficial. Evaluate thermal management strategies based on the junction-to-case and junction-to-ambient thermal resistance values provided in the datasheet.
This part belongs to the AON679 series of 30V N-Channel MOSFETs from Alpha & Omega Semiconductor. It is designed for consumer market applications and utilizes advanced trench technology to achieve low on-resistance and high current capability. The device is manufactured in compliance with environmental standards including RoHS and REACH regulations.
Compatible alternatives include other 30V N-Channel MOSFETs with similar pinouts and electrical ratings, such as the AON6790 or AON6794 from the same manufacturer family. Cross-referencing with third-party equivalents requires verifying matching RDS(ON), package dimensions, and thermal performance characteristics.
The integrated Schottky diode provides a soft recovery path for body diode currents, reducing reverse recovery charge and improving efficiency in switching applications.
The device undergoes 100% Unclamped Inductive Switching (UIS) testing to ensure robustness against avalanche energy events during operation.
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