Single FETs, MOSFETs AONS66405 product image

AONS66405

$0.80
  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:a219dd18888c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AONS66405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AONS66405

  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:68A (Ta), 310A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Rds On (Max) @ Id, Vgs:0.95mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):7.3W (Ta), 215W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN (5x6)
  • Package / Case:8-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AONS66405

AONS66405

Single FETs, MOSFETs Overview

The AONS66405 is a 40V N-Channel AlphaSGT™ Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features an 8-DFN(5x6) surface-mount package with exposed pad. Key electrical parameters include a drain-source voltage (BVDSS) of 40V, continuous drain current (ID) of 310A at TC=25°C, and maximum gate-source voltage (VGS) of ±20V. The device exhibits low on-resistance (RDS(ON)) of less than 0.95mΩ at VGS=10V and 20A, and less than 1.05mΩ at VGS=8V. Thermal characteristics include a junction-to-case resistance (RθJC) of 0.58°C/W and a maximum junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • AlphaSGT™ technology provides optimized switching performance with low RDS(ON)*QOSS product.
  • Robust avalanche capability verified through 100% Unclamped Inductive Switching (UIS) testing.
  • Gate reliability ensured via 100% Gate Resistance (Rg) testing.
  • Compliant with RoHS 2.0 standards and halogen-free manufacturing requirements.

Single FETs, MOSFETs Applications

  • Synchronous rectification circuits
  • Battery Management Systems (BMS)
  • Motor power control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation to ensure correct packaging and form factor. Confirm that the component meets all applicable legal requirements, including export control regulations. Evaluate the suitability of the product for the intended application, as the manufacturer reserves the right to modify specifications without notice. Ensure compliance with the terms and conditions of sale provided by Alpha & Omega Semiconductor Inc.

Single FETs, MOSFETs Selection Notes

Select this component based on its 40V rating and high current capacity suitable for low-voltage, high-current designs. Consider the thermal resistance values when designing heat dissipation strategies for the 8-DFN(5x6) package. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at 8V or 10V. Assess the switching speed parameters against the system's frequency requirements.

Single FETs, MOSFETs Part Context

This component belongs to the AlphaSGT™ family of N-Channel Power MOSFETs from Alpha & Omega Semiconductor Inc. The series is designed for efficient power management solutions. The manufacturer specializes in power management ICs and discrete semiconductors for consumer electronics, computing, and industrial systems. This specific model utilizes advanced trench gate technology to minimize conduction losses.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the AONS66405?

The maximum pulsed drain current (IDM) is 630A, limited by the single pulse width and maximum allowed junction temperature of 150°C.

How is the body-diode reverse recovery characterized?

The body-diode reverse recovery time (trr) is 26ns and the reverse recovery charge (Qrr) is 106nC, measured at IF=20A and di/dt=500A/ms.

What is the total gate charge specification?

The total gate charge (Qg) at VGS=10V and ID=20A is typically 118nC with a maximum of 165nC.

AONS66405AONS66405
$0.80
Buy Now