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AONS66405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AONS66405 is a 40V N-Channel AlphaSGT™ Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features an 8-DFN(5x6) surface-mount package with exposed pad. Key electrical parameters include a drain-source voltage (BVDSS) of 40V, continuous drain current (ID) of 310A at TC=25°C, and maximum gate-source voltage (VGS) of ±20V. The device exhibits low on-resistance (RDS(ON)) of less than 0.95mΩ at VGS=10V and 20A, and less than 1.05mΩ at VGS=8V. Thermal characteristics include a junction-to-case resistance (RθJC) of 0.58°C/W and a maximum junction temperature range of -55°C to 150°C.
Verify the specific orderable part number against the manufacturer's official documentation to ensure correct packaging and form factor. Confirm that the component meets all applicable legal requirements, including export control regulations. Evaluate the suitability of the product for the intended application, as the manufacturer reserves the right to modify specifications without notice. Ensure compliance with the terms and conditions of sale provided by Alpha & Omega Semiconductor Inc.
Select this component based on its 40V rating and high current capacity suitable for low-voltage, high-current designs. Consider the thermal resistance values when designing heat dissipation strategies for the 8-DFN(5x6) package. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at 8V or 10V. Assess the switching speed parameters against the system's frequency requirements.
This component belongs to the AlphaSGT™ family of N-Channel Power MOSFETs from Alpha & Omega Semiconductor Inc. The series is designed for efficient power management solutions. The manufacturer specializes in power management ICs and discrete semiconductors for consumer electronics, computing, and industrial systems. This specific model utilizes advanced trench gate technology to minimize conduction losses.
Public confirmed substitute part numbers are not available in the provided source material.
The maximum pulsed drain current (IDM) is 630A, limited by the single pulse width and maximum allowed junction temperature of 150°C.
The body-diode reverse recovery time (trr) is 26ns and the reverse recovery charge (Qrr) is 106nC, measured at IF=20A and di/dt=500A/ms.
The total gate charge (Qg) at VGS=10V and ID=20A is typically 118nC with a maximum of 165nC.
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