AONX38320

Overview

The AONX38320 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor. It features an asymmetrical configuration housed in an 8-DFN package. The device supports a drain-source voltage of 30V and continuous drain currents of 27A at ambient temperature and 66A at case temperature. Maximum power dissipation ratings are specified as 4.1W (Ta), 24W (Tc), 4.4W (Ta), and 73W (Tc). The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Dual N-channel asymmetrical MOSFET configuration
• Low thermal resistance design for efficient heat dissipation
• High current handling capability in compact 8-DFN package

Applications

• DC-DC converter circuits
• Power management modules
• Battery protection systems

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging type. Ensure the requested quantity matches the manufacturer's standard reel specifications. Confirm active status and lead time availability through authorized distribution channels prior to finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual N-channel switching with high current density in space-constrained designs. Consider the asymmetrical layout benefits for specific bridge configurations. Evaluate thermal performance requirements against the provided Ta and Tc power dissipation limits.

Part Context

This part belongs to the Alpha & Omega Semiconductor MOSFET array family, designed for power switching applications. It utilizes metal oxide semiconductor technology optimized for low on-resistance and fast switching speeds. The 8-DFN package provides a compact footprint suitable for modern surface-mount assembly processes.

Replacement Considerations

Consult official cross-reference data for compatible dual N-channel MOSFET arrays with similar 30V voltage ratings and comparable current capabilities. Verify pinout compatibility and thermal characteristics before substituting.